| Title |
|
Optical measurement tools for automation of PVD deposition systems |
| Sponsor |
|
Roth und Rau AG, Hohenstein-Ernstthal, Germany (SME) |
| Grant |
|
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| PI |
|
M. Schubert |
|
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Mueller Matrix ellipsometry analysis and control of incoherent film structures |
| Duration |
|
01.03.2005 - 31.12.2005 |
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| Title |
|
Industrial in-situ Raman scattering tool |
| Sponsor |
|
Solarion GmbH, Leipzig, Germany (SME) |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
Development of an interface for real-time analysis of composition and growth parameters fromo in-situ Raman measurement systems |
| Duration |
|
01.04.2005 - 31.07.2005 |
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| Title |
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Development of Raman tools for industrial in-line applications |
| Sponsor |
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Chamber of Industry and Commerce of the City Leipzig and University Leipzig, Leipzig, Germany |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
|
| Duration |
|
01.01.2005 - 30.06.2005 |
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| Title |
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Electrical and optical properties of transparent conductive oxides |
| Sponsor |
|
von Ardenne Anlagenbau GmbH, Dresden, Germany (SME) |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
|
| Duration |
|
01.10.2004 - 31.12.2004 |
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| Title |
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Functional optical thin films II |
| Sponsor |
|
Flabeg GmbH & Co. KG, Furth im Wald, Germany (SME) |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
|
| Duration |
|
01.08.2004 - 31.07.2005 |
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| Title |
|
Parallel in-line design for optical PVD process control |
| Sponsor |
|
von Ardenne Anlagenbau GmbH, Dresden, Germany (SME) |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
|
| Duration |
|
01.08.2004 - 31.10.2004 |
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| Title |
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Generalized far-infrared ellipsometry of magnetooptic free-carrier-effects in III-V semiconductor layer structures |
| Sponsor |
|
Deutsche Forschungsgemeinschaft (German National Science Foundation) |
| Grant |
|
Schu 1338/3-1 |
| PI |
|
M. Schubert |
|
|
The electron and hole effective mass and mobility, and their dependence on the carrier concentration shall be accurately
determined using magnetooptic ellipsometry for exemplary multinary alloy zincblende group-III-group-V semiconductors. Materials
of technological importance and current scientific interest investigated in this proposal are AlGaInP, and boron or nitrogen
diluted InGaAs alloys, respectively.
|
| Duration |
|
01.01.2004 - 31.12.2005 |
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| Title |
|
Interface-induced electro-optic properties of oxide semiconductor - ferroelectrica heterostructures |
| Sponsor |
|
Deutsche Forschungsgemeinschaft, in Forschergruppe 404 "Oxidische Grenzfl�chen" (German National Science Foundation) |
| Grant |
|
Schu 1338/4-1,2 |
| PI |
|
M. Schubert, M. Lorenz |
|
|
Mit Hilfe der Laser-Plasmaabscheidung (PLD) werden Grenzfl�chen aus perowskitischen und wurtzitischen Materialien (Doppelheterostrukturen und Multischichten) hergestellt und bez�glich ihrer strukturellen, optischen und elektro-optischen Eigenschaften untersucht. Als Modellsystem wird in der ersten Phase Bariumtitanat (BaTiO3, Perowskit-Struktur) und Zinkoxid (ZnO, Wurtzit-Struktur) verwendet. Beide Systeme sind auf Grund ihrer besonderen materialphysikalischen Eigenschaften zukunftsorientierte Werkstoffe der Mikro- und Optoelektronik.
Unser Ansatz besteht darin, schaltbare ionische Perowskit-Grenzfl�chenladungen mit nicht-schaltbaren ionischen Wurtzit-Grenzfl�chenladungen zu kombinieren, und deren Wechselwirkung zu studieren. Insbesondere soll der Einfluss der freien und gebundenen Grenzfl�chenladungen sowie der Realstruktur der Grenzfl�chen auf die Ausbildung ferroelektrischer Phasen innerhalb von Doppelheterostrukturen und Multischichten bestimmt werden. Fernziel ist die Exploration der neuartigen Materialkombinationen f�r Anwendungen in zuk�nftigen Bauelementstrukturen.
|
| Duration |
|
01.01.2004 - 31.12.2005(2006) |
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| Title |
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in-situ Analytik des Wachstums flexibler Solarzellen auf CuInSe2-Basis |
| Sponsor |
|
Solarion GmbH, Leipzig, Germany (SME) |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
Optische und elektrische Eigenschaften von D�nnschichtsolarzellen auf flexiblen Substraten |
| Duration |
|
01.01.2004 - 30.06.2004 |
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| Title |
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Functional optical thin films |
| Sponsor |
|
Flabeg GmbH & Co. KG, Furth im Wald, Germany (SME) |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
Control and optimization of functional optical coatings |
| Duration |
|
01.09.2003 - 31.12.2003 |
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| Title |
|
In-situ-Ramanscattering and in-situ-Ellipsometry of flexible
Cu-(In,Ga)-(Se,S)-thin-film solar cells |
| Sponsor |
|
Bundesministerium f�r Bildung und Forschung, in Wachstumskern INNOCIS |
| Grant |
|
03WKI09 (subgrant FKO) |
| PI |
|
M. Schubert, V. Riede |
|
|
The aim is the in-line, non-destructive, real-time control and feed-back
for optimization of the optical and structural properties of the
Cu-(In,Ga)-(Se,S)-thin-film solar cells during deposition at the Solarion
GmbH Leipzig. A new combination of spectroscopic in-situ Raman scattering
with in-situ spectroscopic ellipsometry shall be established. |
| Duration |
|
01.08.2001 - 31.12.2003 |
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| Title |
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Free-carrier properties and infrared dielectric functions of organic semiconductor layers |
| Sponsor |
|
JOANNEUM Research Forschungsgesellschaft mbH, Graz, Austria |
| Grant |
|
|
| PI |
|
M. Schubert |
|
|
Infrared spectroscopic ellipsometry for wavenumbers from 333 cm-1 to 4000 cm-1
is used as unique technique for determination of free-carrier properties and phonon mode frequencies in
organic semiconducting materials in layered structures. The ability of this non-contact optical tool to extract these
information from extremely thin layers is tested. Hall effect measurements are performed in order to obatin complementary
information. Model lineshape analysis of the ellipsometry data upon the classical Drude approach aimes at quantification of
the free-carrier densitiy, mobility, and effective mass parameter information. |
| Duration |
|
01.05.2001 - 31.12.2002 |
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| Title |
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Generalized infrared ellipsometry characterization of
lattice properties,
phonon modes and free-carrier parameters in
group-III nitride heterostructures |
| Sponsor |
|
Deutsche Forschungsgemeinschaft, in Schwerpunktprogram SPP1032 (1997-2002) (German National Science Foundation) |
| Grant |
|
Rh 28/3-1, Rh 28/3-2 |
| PI |
|
M. Schubert, B. Rheinl�nder |
|
|
The group III-nitrides ((BN), GaN, AlN, InN, AlGaN, InGaN,
AlInN) are promising materials for many optoelectronic device
applications over a large spectral region (~ 1.9 eV ... 6 eV
(~9 ... 10 eV)). Generalized infrared ellipsometry is used here
to study anisotropy of phonon properties and free-carrier
parameters of MBE and MOVPE grown group-III nitride single
layers and heterostructurs. Special attention is drawn to the
anisotropy of carrier effective mass and optical mobility
parameters. The infrared ellipsometry technique is
non-destructive, and is being uniquely employed for
characterization of wide band gap materials in this proposal.
Effects of strain and alloying in binary, ternary, and
quaternary layers can be studied and separated. Composition and
free-carrier parameters are accessible without sample
contamination. For example, focus is directed on p and n-type
doping in cubic and hexagonal GaN and AlGaN single layers and
superlattices, 2DEG effects at the GaN-AlGaN interface, effects
at the SiC/GaN interface, and correlation of electrical and
optical carrier parameters. |
| Duration |
|
01.01.1999 - 31.12.2002 |
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| Title |
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Infrared Spectroscopic Ellipsometry |
| Sponsor |
|
National Science Foundation |
| Grant |
|
DMI-9901510 (subgrant) |
| PI |
|
M. Schubert, J. A. Woollam (University of Lincoln-Nebraska, U.S.A.) |
|
|
This program investigates new applications of infrared
ellipsometry with spectral range extension for characterization
of microstructures in III-V materials. Lattice mode frequencies
of Phosphides and Arsenides will be explored using a prototype
rotating-analyzer spectroscopic ellipsometer setup. IR
ellipsometry will be evaluated as a technique for studying
spontaneously or synthetically ordered III- V semiconductors. In
particular, spontaneous and synthetically ordering will be
investigated in the (Al,Ga)InP and (Al,Ga)InAs systems. The
investigations will aim to (1) measure and assign
compound-material optical phonons and their polarization
dependencies, (2) derive an anisotropic dielectric function
model for the infrared response of ordered semiconductor
compounds, and (3) compare the detected phonon modes with
theoretical predictions. Synthetically ordered samples will
cover a wide range of superlattice, and possibly embedded
monolayer materials, with interest in characterization of the
heterostructure optical properties and applicability for light
emitting and detector systems. |
| Duration |
|
01.10.1999 - 30.09.2001 |
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